25a single-phase glass-passivated bridge rectifier www.siliconstandard.com 1 of 2 TS25P01G - 07g 2/26/2005 rev.1.01 rohs compliant. 1.193(30.3) 1.169(29.7) c .118(3.0) 0 x45 .402(10.2) .386(9.8) .106(2.7) .091(2.3) .094(2.4) .079(2.0) .043(1.1) .035(0.9) .709(18.0) .669(17.0) .165(4.2) .150(3.8) .303 (7.7) .303 (7.7) .287 (7.3) .287 (7.3) .031(0.7) .024(0.6) .114(2.9) .098(2.5) .134(3.4) .122(3.1) .150(3.8) .134(3.4) .189(4.8) .173(4.4) .441(11.2) .425(10.8) .189(4.8) .799(20.3) .776(19.7) voltage range 50 to 1000 volts features ul recognized file # e-96005 glass passivated junction ideal for printed circuit board reliable low cost construction plastic material has underwriters laboratory flammability classification 94v-0 surge overload rating to 300 amperes peak high case dielectric strength of 2000 v rms mechanical data case: molded plastic terminals: leads solderable per mil-std-750, method 2026 w eight: 0.3 ounce, 8 grams mounting torque: 8.17 in. lbs. max. ts-6p dimensions in inches and (millimeters) maximum ratings and electrical characteristics rating at 25c ambient temperature unless otherwise specified. single phase, half wave, 60 hz, resistive or inductive load. for capacitive load, derate current by 20% parameter symbol ts25p 01g ts25p 02g ts25p 03g ts25p 04g ts25p 05g ts25p 06g ts25p 07g units maximum recurrent peak reverse voltage v rrm 50 100 200 400 600 800 1000 v maximum rms voltage v rms 35 70 140 280 420 560 700 v maximum dc blocking voltage v dc 50 100 200 400 600 800 1000 v maximum a verag e forward rectified current see fig. 1 i (av) 25.0 a peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load (jedec method ) i fsm 300 a maximum instantaneous forward voltage @25a v f 1.1 v maximum dc reverse current @ t a =25c at rated dc blocking voltage @ t a =125c i r 10.0 500 ua ua typical thermal resistance (note) r jc 0.6 c/w operating temperature range t j -55 to +150 c storage temperature range t stg -55 to + 150 c note: thermal resistance from junction to case with device mounted on 5? x 7? x 0.25? al-plate heatsink.
in formation furnished by silicon standard corporation is believed to be accurate and reliable. however, silicon standard corporation makes no guarantee or warranty, expre ss or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its use. silicon standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including without limitation enhancement in reliability, functionality or design. no license is granted, whether expressly or by im plication, in relation to the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of silicon standard corporation or any third parties. www.siliconstandard.com 2 of 2 TS25P01G - 07g 2/26/2005 rev.1.01 ratings and characteristic curves fig.3- typical reverse characteristics per bridge element instantaneous reverse current .( a) 0 20 40 60 80 100 120 140 0.01 0.1 1 10 percent of rated peak reverse voltage. (%) tj=25 c 0 tj=125 c 0 fig.4- typical forward characteristics per bridge element instantaneous forward current. (a) .6 .8 1.0 1.2 1.4 1.6 1.8 2.0 0.1 1.0 10 100 1000 forward voltage. (v) fig.2- maximum non-repetitive forward surge current per bridge element peak forward surge current. (a) 1 234 1.5 5 6 9 8 710 25 2015 30 100 6040 80 20 100 300 400 200 number of cycles at 60hz fig.1- maximum forward current derating curve case temperature. ( c) o average forward current. (a) 20 100 120 140 160 8060 40 180 0 5 10 15 20 25 30
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